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The yield of bismuth-cesium photosurfaces is sometimes strongly temperature dependent. We have investigated this effect and found it to be dependent upon the presence of oxygen and upon the size of the aggregates making up the photosurface. The photoelectron energy spectra are also examined. It is concluded that the temperature dependence probably arises from a change in escape depth with temperature because of phonon collisions, but that the principal photoelectron energy loss may occur at oxygen impurity sites.
Zollweg et al. (Sat,) studied this question.
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