In Situ Auger Electron Spectroscopy Study of Atomic Layer Deposition:  Growth Initiation and Interface Formation Reactions during Ruthenium ALD on Si−H, SiO2, and HfO2 Surfaces

Growth initiation and film nucleation in atomic layer deposition (ALD) is important for controlling interface composition and achieving atomic-scale films with well-defined composition. Ruthenium ALD is studied here using ruthenocene and oxygen as reactants, and growth initiation and nucleation are characterized on several different growth surfaces, including SiO2, HfO2, and hydrogen terminated silicon, using on-line Auger electron spectroscopy and ex-situ X-ray photoelectron spectroscopy. The time needed to reach the full growth rate (typically approximately 1 A per deposition cycle) is found to increase as the surface energy of the starting surface (determined from contact angle measurements) decreased. Growth starts more readily on HfO2 than on SiO2 or Si-H surfaces, and Auger analysis indicates distinct differences in surface reactions on the various surfaces during film nucleation. Specifically, surface oxygen is consumed during ruthenocene exposure, so the nucleation rate will depend on the availability of oxygen and the energetics of surface oxygen bonding on the starting substrate surface.