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A bottom-gate tungsten-doped InZnSnO (IZTO:W) thin film transistor (TFT) is fabricated. The IZTO:W thin film is deposited by radio-frequency magnetron sputtering at room temperature. The x-ray diffraction result indicates that the film is amorphous. The transmittance spectrum shows that the film is transparent with an average optical transmittance over 80% in the visible range. The TFT shows excellent performances with a saturation mobility (μSAT) of 41.0 cm2/V s, a threshold voltage (VTH) of 2.4 V, a subthreshold swing of 0.5 V/decade, and a current on/off ratio (ION/IOFF) of 6.8 × 108. The gate bias stress stability and stress recovery of the TFT are investigated. The threshold voltage shifts (ΔVTH) under negative and positive bias stress for 1 h are −9.4 and 10.0 V, respectively. After the stress is removed, ΔVTH under negative and positive stress recovery for 1 h are 7.0 and −3.6 V, respectively.
Su et al. (Tue,) studied this question.