Key points are not available for this paper at this time.
Measurements of the temperature dependence of electrical resistivity in p- and n-type iron-doped germanium crystals indicate that Fe introduces impurity levels in Ge at 0. 340. 02 ev from the valence band and 0. 270. 02 ev from the conduction band. Such samples show very high resistivity at 77^. At this temperature, n-type samples also show high photosensitivity and slow photoresponse, presumably because of hole traps.
Tyler et al. (1954) studied this question.