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We have studied the valence band of Ga0.47In0.53As by ultraviolet photoemission using photon energies of 11.7, 16.8, and 21.2 eV. The photo-electron energy spectra show that the valence band of Ga0.47In0.53As has well-defined structure similar to that of binary III-V semiconductors. We have used these spectra to determine a conduction band Γ-L separation of 0.55 eV at 300 K.
Cheng et al. (1982) studied this question.
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