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The group VA element P and the group IA elements Li and Na give rise to shallow acceptor centers in ZnTe and in CdTe. An analysis of the carrier concentration data for Li-doped ZnTe and P-doped ZnTe on the basis of a single-level acceptor and nondegenerate statistics indicates that P and Li produce shallow, hydrogenic-type acceptor levels in ZnTe. Annealing studies demonstrate that the shallow levels in Li-doped ZnTe and CdTe may be removed by heat treatment at 250^ for tens of hours. The concentrations of shallow acceptors in P-doped ZnTe and Na-doped ZnTe are relatively unchanged by the annealing procedure. The effective mass for holes in ZnTe as deduced from the Hall analysis is 0. 36m, where m is the free-electron mass.
Crowder et al. (Fri,) studied this question.