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We report the use of a novel transparent AlN base layer to achieve sub-300 nm electroluminescence from an AlGaN p - n junction single quantum well light emitting diode grown on sapphire by metal organic chemical vapor deposition. For unpackaged devices tested on wafer at a continuous current of 120 mA, an optical power of 2.4 µW was achieved. Peak emission was 292 nm, with very little secondary wavelength emission.
Hanlon et al. (2003) studied this question.