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The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys is reviewed including exciting recent results. Attention is paid to the crystal growth techniques, structural, optical, and electrical properties of GaN, AlN, InN, and their alloys. The various theoretical results for each material are summarized. We also describe the performance of several device structures which have been demonstrated in these materials. Near-term goals and critical areas in need of further research in the III–V nitride material system are identified.
Strite et al. (Wed,) studied this question.