Hole Transport in Polar Semiconductors

Abstract The transport properties of holes in cubic semiconductors have been studied with a Monte Carlo technique taking into account polar scattering within and between the two valence bands degenerate at K = 0. The predominant p‐like symmetry of the valence band wave functions has been found to enhunce the polar ohmic mobility of about a factor two with respect to the case in which it is neglected. The comparison between theoretical results and experimental data evidences the dominant importance of polar scattering mechanism for a typical II‐VI compound (CdTe)in the region of temperatures between 100 and 400 °K. On the contrary, this scattering mechanism alone cannot explain the low field transport of a typical III‐V compound (GaAs) in the same temperature range, according to its lower ionicity.