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The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions that may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of disordered F/N/F perpendicular spin valves as a function of the angle between magnetization vectors is shown to obey a simple universal law. The spin-current induced magnetization torque can be measured by the angular magnetoresistance of these spin valves. The results are generalized to arbitrary magnetoelectronic circuits.
Bauer et al. (2003) studied this question.
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