Comparison of IGBT junction temperature measurement and estimation methods-a review

Recent growth of power semiconductor device market has been driven largely by the growing demand for an efficient way to convert and distribute energy in the field of renewable energy, electrical vehicles, aerospace, marine and applications. For safety, critical applications, temperature management and control are the most important functions. Therefore, estimating or measuring the junction temperature of the power semiconductor device is useful to perform thermal management and converter control. Several methods have been published to measure the junction temperature of the insulated gate bipolar transistor (IGBT). This paper attempts to summarize the past developments and recent advances in measuring junction temperature of power semiconductor device is presented. Finally, the promising methods are recommended for future work.