Key points are not available for this paper at this time.
Ferroelectric Field‐Effect‐Transistors In article number 2200566, Sungjoo Lee and co‐workers report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP(2)S(6)/α‐In(2)Se(3)). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with a long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. Image: see text
Baek et al. (Fri,) studied this question.