Current Status and Future Prospects of GaN-on-GaN Vertical Power Devices

Current status and future prospects of GaN vertical power devices fabricated on GaN substrates are presented. Fundamental material properties of GaN related to vertical power devices, progress of GaN bulk substrate developments and device fabrication processes such as epitaxial growth, ion implantation and MOS interface are reviewed. Future challenges toward commercialization of GaN vertical devices are also discussed.