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Emerging embedded nonvolatile memory (eNVM) based on hafnium oxide ferroelectric materials has shown great advantages such as high reliability, high speed, good scalability, and CMOS process compatibility. Here, a 2T2C structure ferroelectric memory (FRAM) is proposed based on the 180-nm CMOS technology and a TiN/Hf ₀. ₅ Zr ₀. ₅ O ₂ /TiN ferroelectric capacitor. The device exhibits great ferroelectric properties with the remnant polarization (2P ₑ) of 30 C/cm ^2 under a low operation voltage of 2 V. Also, it shows great high-temperature endurance and retention properties, which has no obvious degradation after 10 ^10 cycles pulses and 10 ^4 s under 175 ^ C. In addition, a 2-Mb capacity memory chip with 16 128 kb subarrays using the 2T2C structure and separated word lines (WLs) was fabricated. The wafer can maintain a high yield of 98. 28% after baking for 30 h at 175 ^ C, which shows great reliability in the chip level.
Guo et al. (Mon,) studied this question.