Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition

Abstract Direct InN growth is demonstrated and characterized on a sapphire (Al 2 O 3 ) substrate by plasma‐enhanced metal–organic chemical vapor deposition using high‐density nitrogen (N 2 ) microstrip‐line microwave plasma. N 2 plasma irradiation at 650 °C for 20 min forms AlN on Al 2 O 3 substrate. No peak regarding metallic In droplets is detected from InN/Al 2 O 3 regardless of N 2 plasma irradiation. InN is found to be rotated 30° with their a ‐axis oriented to become InN // Al 2 O 3 . The transition layers are confirmed at the InN/Al 2 O 3 interface regardless of N 2 plasma irradiation. The surface of InN consisted of large undulations with root mean square values >30 nm, suggesting that strain relaxation introduces misfit dislocations.