What question did this study set out to answer?

This work aims to address the challenge of low-resistance metal-semiconductor contacts in 2D electronic devices.

May 3, 2026Open Access

An n-Type Schottky Contact with Low Tunneling Resistance in 2D FeB2/SiC Heterostructure

Key Points

This work aims to address the challenge of low-resistance metal-semiconductor contacts in 2D electronic devices.
Systematic investigation of the structural stability and electrical characteristics of the n-type Schottky contact.
Design of the FeB2/SiC heterostructure to optimize contact performance.
Achieved low tunneling resistance in the n-type Schottky contact.
Demonstrated enhanced electrical performance suitable for high-performance 2D electronic applications.

Abstract

The design of low-resistance metal-semiconductor contacts remains a critical challenge for the development of high-performance two-dimensional (2D) electronic devices. In this work, we design and systematically investigate the structural stability,...

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Authors

Nguyen Cuong

Duy Tan University

Le Phuong Phuong Long

Lac Hong University

Huynh V. Phuc

Dong Thap University

Journals

Nanoscale Advances

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Cuong et al. (Thu,) studied this question.

synapsesocial.com/papers/69f6e6e68071d4f1bdfc7799 — DOI: https://doi.org/10.1039/d6na00108d

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

Recent progress in two-dimensional van der Waals heterojunctions for flexible energy storage applications· 2025 · 13 citations
Exploring high-pressure FeB2: Structural and electronic properties predictions· 2016 · 13 citations
2D materials and van der Waals heterostructures· 2016 · 7,222 citations
C<sub>3</sub>N/phosphorene heterostructure: a promising anode material in lithium-ion batteries· 2018 · 112 citations
The rise of graphene· 2007 · 39,406 citations

An n-Type Schottky Contact with Low Tunneling Resistance in 2D FeB2/SiC Heterostructure

Key Points

Abstract

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Cite this study

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