Growth and Characterization of Ultra-Wide-Bandgap MgGa2O4 Single Crystals

Key Points

• The aim is to grow and characterize MgGa2O4 single crystals for their use in high-temperature and DUV applications.
• Synthesis of MgGa2O4 single crystals under high-temperature conditions.
• Characterization of the crystalline structure and properties.
• Assessment of stability and performance in DUV applications.
• MgGa2O4 crystals demonstrated high-temperature stability.
• Crystalline structure showed promise for DUV applications.
• Potential applications identified in light-emitting and power devices.