Growth and Characterization of Ultra-Wide-Bandgap MgGa2O4 Single Crystals

Huihui Li; Yiyuan Liu; Xinyu Liu; Hongkai Ren; Jiahui Xie; Yang Li; Wenxiang Mu

doi:10.1039/d6ce00018e

January 1, 2026CrystEngComm

Growth and Characterization of Ultra-Wide-Bandgap MgGa2O4 Single Crystals

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Key Points

The aim is to grow and characterize MgGa2O4 single crystals for their use in high-temperature and DUV applications.
Synthesis of MgGa2O4 single crystals under high-temperature conditions.
Characterization of the crystalline structure and properties.
Assessment of stability and performance in DUV applications.
MgGa2O4 crystals demonstrated high-temperature stability.
Crystalline structure showed promise for DUV applications.
Potential applications identified in light-emitting and power devices.

Implication

This research demonstrates the stabilization and characterization of MgGa2O4 crystals, suggesting potential for new DUV applications.

Abstract

High-temperature stable deep-ultraviolet (DUV) ultra-wide bandgap semiconductors hold significant application potential in the fields of light-emitting, power devices and solar-blind detection. In this work, high-temperature thermally stable MgGa2O4 single crystals...

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Cite This Study

Li et al. (2026) studied this question.

synapsesocial.com/papers/69c4cc98fdc3bde448917ff2 https://doi.org/10.1039/d6ce00018e

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Growth and Characterization of Ultra-Wide-Bandgap MgGa2O4 Single Crystals

Key Points

Implication

Abstract

Discussion

Cite This Study

Growth and Characterization of Ultra-Wide-Bandgap MgGa2O4 Single Crystals

Key Points

Implication

Abstract

Discussion

Cite This Study

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