Application of Ultra-Wide Bandgap Semiconductor Ga2O3Material in Photodetectors

The rapid development of optoelectronic technology, the demand for high-performance photodetectors in various fields has been continuously increasing. Ultra-wide bandgap materials have attracted significant attention due to their potential to meet the requirements for high-temperature, high-power, and high-speed optoelectronic devices. Among them, Ga2O3, as an emerging ultra-wide bandgap semiconductor material, has shown unique properties and great application prospects. This paper systematically reviews all the unique properties of Ga2O3ultra-wide bandgap materials and also describes its advantages in photodetection applications. It examines the latest progress of GaO photodetectors in many application fields, including military early warning, industrial monitoring, biomedicine, etc. Moreover, this paper conducts a detailed analysis of some breakthroughs in key technologies, such as material epitaxial growth, device architecture design, and performance optimization strategies. This study further presents a prospective analysis of potential future research directions, specifically focusing on enhancing material growth techniques to achieve larger-sized, high-quality GaO single crystals, refining device architectures for improved power handling and faster response times, and exploring novel performance optimization strategies to further reduce dark current and enhance detection sensitivity. Additionally, a systematic review of the main research methods employed in related literature, including experimental characterization, theoretical modeling, and simulation approaches, is provided to offer a comprehensive understanding of the current state and future trends in GaO-based photodetector research.