State‐of‐the‐Art Solar Blind and X‐Ray Photodetectors Based on Gallium Oxide

The rapid advancement in optoelectronic devices has sparked intense interest in wide‐bandgap semiconductors for UV and X‐ray detection. While Ga 2 O 3 has emerged as a promising material for photodetection, a quantitative understanding of the relationships between material properties, device structures, and detection performance remains challenging. This analysis reveals that among different types of UV photodetectors, phototransistors and avalanche devices can achieve superior responsivity (up to 10 7 A W −1 ) and detectivity (up to 10 18 Jones), while for X‐ray detection, structures based on Ga 2 O 3 ‐derived materials demonstrate the highest sensitivity (up to 10 9 μC Gy air −1 cm −2 ). Insights into their gain mechanisms and performance characteristics for various X‐ray detectors, especially with heterojunction and cold cathode designs are provided. In summary, this systematic comparison of growth conditions, device structures, and detection capabilities provides a valuable reference for future developments in Ga 2 O 3 ‐based UV and X‐ray detection systems.