This work presents a complete China-original technical solution for breaking 3nm/2nm advanced chip process bottlenecks, including the main design framework and the underlying physical mechanism as supplementary material. Based on the global geometry unification principle, the core innovation is the bulge-concave triangular fractal lattice nanoscale metamaterial, which integrates high-efficiency three-dimensional heat dissipation, low-dielectric signal isolation, and micro-nano sensing in one structure. To bypass the EUV lithography bottleneck, a biomimetic composite 3D printing system is proposed to realize error-free fabrication of 3–10 nm lattice structures. A dedicated geometric symbol script is also developed to enable one-click quantitative calculation and greatly reduce R&D costs and cycles. The supplementary material further elaborates the nanoscale electron confinement and field-regulated transport mechanism inside the triangular fractal lattice, clarifies the quantitative binding relationship between global geometric parameters and electron aggregation/transport behavior, and reveals the physical essence of the constraint-release dual-cycle energy transport principle. Together, these two documents form a closed theoretical–engineering system for next-generation nanoscale chip materials, manufacturing processes, and physical mechanism support, providing a feasible independent and controllable path for the semiconductor industry to break through material and process bottlenecks.
Kaili Xiang (Thu,) studied this question.
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