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Recombination processes in antimonide-based materials for thermophotovoltaic (TPV) devices have been investigated using a radio-frequency (rf) photoreflectance technique, in which a Nd–YAG pulsed laser is used to excite excess carriers, and the short-pulse response and photoconductivity decay are monitored with an inductively coupled noncontacting rf probe. Both lattice-matched AlGaAsSb and GaSb have been used to double cap InGaAsSb active layers to evaluate bulk lifetime and surface recombination velocity with different active layer thicknesses. With an active layer doping of 2×1017 cm−3, effective bulk lifetimes of 95 ns and surface recombination velocities of 1900 cm/s have been obtained. As the laser intensity is increased the lifetime decreases, which is attributed to radiative recombination under these high-level injection conditions. Similar measurements have been taken on both TPV device structures and starting substrate materials for comparison purposes.
Saroop et al. (1999) studied this question.