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The optimization of device series resistance in ultra-thin film SOI devices is studied through 2-D simulations and process experiments. To achieve low series resistance, very thin silicides that do not fully consume the SOI film are needed. A novel cobalt salicidation technology using titanium/cobalt laminates is used to demonstrate sub-0.2 /spl mu/m, thin-film SOI devices with excellent performance and very low device series resistance.>
Su et al. (Mon,) studied this question.
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