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JJ
John Jarman
GaN-based semiconductor devices and materials
University of Cambridge
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About
Research focus
GaN-based semiconductor devices and materials
Impact
40 pubs · 754 cites · h-index 12
Affiliations
University of Cambridge
University of Oxford
National Physical Laboratory
Publications
Recent publications by John Jarman
Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3
physica status solidi (b) · Tue,
Three-Photon Excitation of InGaN Quantum Dots
Physical Review Letters · Thu,
Ni/Au contacts to corundum α-Ga2O3
Japanese Journal of Applied Physics · Wed,
Ideal refocusing of an optically active spin qubit under strong hyperfine interactions
Thu,
Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
Nature Communications · Tue,
Decreased Fast Time Scale Spectral Diffusion of a Nonpolar InGaN Quantum Dot
ACS Photonics · Wed,
Study of Ti contacts to corundum α-Ga2O3
Journal of Physics D Applied Physics · Mon,
Pure single-photon emission from an InGaN/GaN quantum dot
APL Materials · Tue,
Combined SEM-CL and STEM investigation of green InGaN quantum wells
Journal of Physics D Applied Physics · Wed,
Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources
Thu,