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JJ

John Jarman

GaN-based semiconductor devices and materials
University of Cambridge

About

Research focus

GaN-based semiconductor devices and materials

Impact

40 pubs · 754 cites · h-index 12

Affiliations

Publications

Recent publications by John Jarman

  1. Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3physica status solidi (b) · Tue,
  2. Three-Photon Excitation of InGaN Quantum DotsPhysical Review Letters · Thu,
  3. Ni/Au contacts to corundum α-Ga2O3Japanese Journal of Applied Physics · Wed,
  4. Ideal refocusing of an optically active spin qubit under strong hyperfine interactionsThu,
  5. Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitrideNature Communications · Tue,
  6. Decreased Fast Time Scale Spectral Diffusion of a Nonpolar InGaN Quantum DotACS Photonics · Wed,
  7. Study of Ti contacts to corundum α-Ga2O3Journal of Physics D Applied Physics · Mon,
  8. Pure single-photon emission from an InGaN/GaN quantum dotAPL Materials · Tue,
  9. Combined SEM-CL and STEM investigation of green InGaN quantum wellsJournal of Physics D Applied Physics · Wed,
  10. Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sourcesThu,