September 17, 2025Open Access

Hydrogen passivation of electron traps and fixed charges in SiO2/β-Ga2O3(001) MOS structures

Puntos clave

Efficiency of post-metallization forming gas annealing reduces defects in MOS structures, enhancing performance significantly.
Interface state density was minimized to (4–7) × 1010 eV−1 cm−2 after hydrogen passivation, indicating an effective intervention.
Post-deposition annealing in various atmospheres combined with FG-PMA leads to improvements in electrical properties for Ga2O3 devices.
Hydrogen atoms play a crucial role in passivating defects, ultimately boosting device reliability for SiO2/β-Ga2O3.

Resumen

We investigated the effect of post-metallization forming gas annealing (FG-PMA) on SiO2/β-gallium oxide β-Ga2O3(001) MOS structures. We found that FG-PMA at a relatively low temperature (200–400 °C) efficiently reduced the interface and near-interface defects, resulting in improvements to device performance and reliability. By performing FG-PMA after post-deposition annealing in O2 and N2 atmospheres, the interface state density near the conduction band edge of Ga2O3 was reduced to as low as (4–7) × 1010 eV−1 cm−2. The significant improvement in electrical properties was attributed to the passivation of electrical defects by hydrogen atoms.

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