Influence of Radial Deformation and Gate Oxide Layer on Electrical Transport in Carbon Nanotube Field-Effect Transistors

Carbon nanotube field-effect transistors (CNTFETs) have emerged as a promising alternative to silicon-based devices for next-generation integrated circuits. Using the lattice nonequilibrium Green's function method, we conduct multiscale modeling of CNTFETs to investigate how radial deformation and gate oxide layer properties influence interface conductance and device performance. Our simulations demonstrate that radial compression of carbon nanotubes (CNTs) enhances current flow at the CNT/gate oxide interface but reduces the transistor's switching current ratio. Conversely, a thin gate oxide layer with high dielectric constant significantly improves the switching current ratio. These findings provide insights for optimizing the electrical characteristics and switching behavior of CNTFETs through structural engineering.