Enhancement of carrier concentration in chemical bath deposited copper sulfide (CuxS) thin film by post-growth annealing treatment

Abstract Copper sulfide thin films (CuxS, 1 ≤ x ≤ 2), owing to their unique optical and electrical properties, have attracted enormous attention in recent research. As one of the chalcogenide semiconductors, CuxS is used in several applications such as chemical sensors, photo-absorbing layers, photovoltaics, and lithium-ion batteries. In this study, copper sulfide thin film (CuxS; where 1 ≤ x ≤ 2) has been deposited by the chemical bath deposition method (CBD) at 27 ○C with the molar ratio for copper and sulfur as 1:5, respectively. The structural, compositional, morphological, optical, and electrical properties of as-deposited and annealed CuxS thin films are investigated. From XRD plots, the presence of a mixture of two co-existing polycrystalline phases is observed, i. e. covellite phase with CuS stoichiometry and digenite phase with Cu1.8S stoichiometry up to an annealing temperature of 200 ○C. At higher annealing temperatures, i.e. at 300 ○C and 400 ○C, the phase of CuxS thin film gets converted to digenite phase with Cu1.8S stoichiometry and chalcocite phase with Cu2S stoichiometry completely. There is an enhancement in the crystallinity of CuxS thin film with an increase in annealing temperature as confirmed by XRD and Raman results. The optical bandgap of CuxS thin film is found to be decreased from 2.81 eV to 1.66 eV with an increase in the annealing temperature. The CuxS thin films are found to be p-type in nature, and the film annealed at 400 ○C possesses the highest carrier concentration as revealed from the Hall measurement. This study aims to investigate the improvement of electrical properties of CuxS thin film with the variation in annealing temperature for optoelectronic applications such as photodetector.