Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal

The modified SiC slurry for CMP process was proposed in order to obtain high-quality surface of 150 mm SiC wafer and then tried to explain the mechanism of the effect of added transition metal ion to improve polishing characteristics of SiC crystal substrate. SiC substrate with using modified slurry exhibited slightly higher MRR value and lower platen temperature than those with using commercial slurries. The addition of transition metal ion into the slurry enhanced oxidation efficiency of SiC crystal surface and improved MRR and the quality of SiC surface.