Van der Waals Encapsulation by Ultra‐thin Oxide for Air‐Sensitive 2D Materials

The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones, such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga