Lateral Heterostructure Formed by Highly Thermally Conductive Fluorinated Graphene for Efficient Device Thermal Management

The continued miniaturization of chips demands highly thermally conductive materials and effective thermal management strategies. Particularly, the high-field transport of the devices built with 2D materials is limited by self-heating. Here a systematic control of heat flow in single-side fluorinated graphene (FG) with varying degrees of fluorination is reported, revealing a superior room-temperature thermal conductivity as high as 128 W m