A study of the effect of γ-radiation on the current-carrying mechanism in the P-CuTlS2 single crystal

The electrical conductivity and volt–ampere characteristics (VAC) of the p-CuTlS 2 single crystal with specific resistance Formula: see text and irradiated by Formula: see text-quantum were studied in the range of 100–300Formula: see textK temperature and 10–10 4 Formula: see textV/cm. It was determined that the cause of the conduction disorder observed in the CuTlS 2 single crystal at low electric fields and high radiation doses is the formation of defect clusters dominated by cation vacancies. A sharp increase in current at high electric fields and temperatures occurs as a result of thermo-field ionization of the acceptor level with activation energy Formula: see textFormula: see texteV and the ionization voltage decreases with increasing radiation dose. Based on the determination of the parameters (Formula: see text) that determine the mechanism of current flow, the dependence of the shape of the potential hole on the radiation dose was determined.