Optically-addressed monolithically-integrated multi-band photodetectors using type-II superlattice materials

This talk reports the operation principles and preliminary demonstration of monolithically integrated optically-addressed multiband PDs using GaSb and latticed-matched InAs/InAsSb type-II superlattices (T2SLs) to cover SWIR, MWIR, and LWIR detection ranges. The design minimizes the number of terminals so that it greatly reduces the complication of layout and device processing and ROIC complexity when implementing the photodetectors into an FPA. Details of device fabrications, characterization, modeling and performances such as dark current, spectral responsivity, and cross-talk will be presented.