The exploration of electronic correlations and orbital occupancy across the metal-insulator transition in a prototype V 2 O 3 system provides valuable insights into the fundamental physics. It also enables the control and enhancement of material functionality, which holds immense importance for diverse technological applications. In the current study, we have explored the essential role of trigonal distortion together with the orbital distributions in iso-structural paramagnetic metal (PM) and paramagnetic insulating (PI) phases of epitaxial V 2 O 3 thin films. Our investigation revealed an intriguing enhancement in electronic correlations and orbital switching across the PM to PI phases in V 2 O 3 . Importantly the PM state demonstrates electron occupation preference in orbitals perpendicular to the film plane, while the PI state reveals a switch in electron occupation preference within the plane of V 2 O 3 thin film, indicating an intriguing orbital switching from PM to PI state. These findings deepen the understanding for tailoring the materials properties and promises for advancing material design.
Sahoo et al. (Thu,) studied this question.