Currently, titanium dioxide films are widely used as the electron transport layer material in perovskite solar cells. An alternative to titanium dioxide for this role could be niobium pentoxide (Nb2O5), an n-type conducting semiconductor oxide. However, the application of Nb2O5 in perovskite solar cells is hindered by a lack of data on its electron transport properties, electrophysical parameters, and current–voltage characteristics. Amorphous niobium pentoxide films were obtained by magnetron sputtering. To study their electrical and capacitive properties, a structure of heavily doped n+-silicon (n+)/niobium oxide/aluminum was used. Based on the analysis of the I–V curves, it was concluded that for a sample at 25 °C, the electron mean free path is greater than the width of the Schottky barrier layer, allowing electrons to pass through this layer without collisions. At temperatures of 35 °C and higher, electrons experience numerous collisions within the Schottky barrier layer. The height of the Schottky barrier for the contact between niobium pentoxide and aluminum was determined. The obtained capacitance frequency plots were explained using the concepts of dipole-relaxation polarization in a dielectric, where electric dipoles can reorient in an external electric field. It has been shown that the use of magnetron sputtering to produce amorphous niobium pentoxide films leads to a reduction in the effective Schottky barrier height. This allows for high electron injection density at low voltages when using such an oxide semiconductor as an electron transport layer, thereby potentially increasing the efficiency of solar cells.
Moshnikov et al. (Sun,) studied this question.