Evolution of ultrasmooth Si surface under scanning Ar ion beam etching with contamination

Puntos clave

• The ultrasmooth silicon surface experiences significant changes during etching with contamination, impacting its final properties.
• Surface characteristics are monitored under scanning ion beam etching, with specific focus on contamination effects.
• Observational analysis utilizing scanning ion beam etching protocols highlights surface evolution under controlled conditions.
• Understanding contamination's role in surface changes is vital for improving semiconductor fabrication techniques.