Intrinsic noise behavioral modeling of GaN HEMTs under small-signal conditions using WOA-HKELM

Puntos clave

• Intrinsic noise modeling reveals significant insights for GaN HEMTs' performance under specific conditions.
• Analysis shows how small-signal conditions affect overall electronic behavior, enhancing design strategies.
• Assessment using WOA-HKELM algorithm provides a novel approach for predicting intrinsic noise characteristics.
• Findings highlight the need for accurate modeling techniques in the design of advanced semiconductor devices.