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Assessing the thermal stability of dielectric LaAlO3 for high-frequency electronic devices | Synapse
March 3, 2026
Assessing the thermal stability of dielectric LaAlO3 for high-frequency electronic devices
AR
Abdalrahman M. Rayan
Sohag University
NA
Naglaa AbdelAll
Imam Mohammad ibn Saud Islamic University
GK
Ghada A. Khouqeer
Imam Mohammad ibn Saud Islamic University
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Puntos clave
Thermal stability of LaAlO3 dielectric materials influences performance in high-frequency electronics, revealing significant potential.
Key evidence shows that the dielectric maintains stability under varied temperatures, improving device reliability.
Analysis includes assessment of LaAlO3 samples under high-frequency conditions to determine practical applications in electronics.
Supports the need for robust materials in electronic devices, highlighting potential for enhanced performance in high-frequency operations.
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Rayan et al. (Tue,) studied this question.
synapsesocial.com/papers/69a75af2c6e9836116a216db
https://doi.org/https://doi.org/10.1016/j.physb.2026.418326