In-Memory Computing exceeding 10000 TOPS/W using Ferroelectric Field Effect Transistors for EdgeAI Applications

Puntos clave

• Performance exceeds 10000 TOPS/W, demonstrating remarkable efficiency in energy utilization for EdgeAI.
• The use of ferroelectric field effect transistors enhances computational speed and reduces latency significantly.
• Analyses show that in-memory computing architecture allows for rapid data processing and storage functionalities.
• This advancement highlights potential for widespread use in EdgeAI applications, necessitating further exploration of scalability.