Optimizing fatigue damage of through-silicon via based on the real microstructure

Puntos clave

• Fatigue damage in through-silicon vias is reduced through optimization of microstructure, improving longevity.
• The study shows a significant reduction in failure rates, with enhanced lifespan for semiconductor devices.
• Assessment using stress analysis across various microstructure configurations identifies optimal patterns.
• Optimizing interconnect structures may enable more reliable and durable semiconductor components.