Engineering stable interfaces: Cs–Te activation for long-lifetime GaAs photocathodes

Puntos clave

• Improved lifetime of GaAs photocathodes is achieved through Cs–Te activation, enhancing overall performance.
• Activation with Cs–Te results in a notable increase in stability and durability compared to untreated samples.
• Utilizing advanced interface engineering methods allows for better optical properties in semiconductor devices.
• Enhanced stability may enable broader applications for next-generation photocathodes in various technologies.