Band alignment of amorphous Ge2S3 and GaN(0001)

Puntos clave

• Band alignment of amorphous germanium sulfide with gallium nitride presents significant semiconductor interfaces.
• The study shows a potential conduction band offset of approximately 0.2 eV between the two materials.
• Analysis using photoluminescence and X-ray photoelectron spectroscopy identifies key electronic properties.
• Understanding these properties may enhance the design of optoelectronic devices based on these materials.