High-temperature operation of AlGaN/GaN Heterojunction Field Effect Transistor embedded diaphragm-based MEMS pressure sensors have been investigated, which utilized their wide bandgap and piezo resistivity to perform stably at elevated temperatures. The performance of the pressure sensor was observed over a change in applied pressure of 35 kPa, which resulted in an experimentally measured change in drain-source resistance (ΔRDS/RDS(0)) of 0.32% at room temperature and 0.65% at 250 °C, respectively. Additionally, the COMSOL-based Finite Element (FE) Simulations, in conjunction with our developed theoretical model, was utilized to theoretically determine the change in drain-source resistance. This theoretically calculated ΔRDS/RDS(0) of 0.45% at room temperature closely aligns with the experimental observations. Moreover, the sensor exhibited a gate-bias-dependent tunability, with the enhancement of sensitivity under increasingly negative gate voltages. Furthermore, the sensors demonstrated a stable and repeatable sensing operation over multiple pressure cycles up to 300 °C, with a rapid response time of <10 ms, suggesting excellent potential for reliable, high-performance pressure sensing in harsh, high-temperature environments.
Prio et al. (Wed,) studied this question.