Band gap engineering of the monolayer β-Ga2O3: Band gap modulation and UV photon manipulation via III/IV main group single-atom doping

Puntos clave

• The study reveals significant band gap modulation in monolayer β-Ga2O3 with specific doping.
• Doping with III/IV main group atoms effectively manipulates UV photon responses, enhancing functionality.
• Analysis combines both theoretical and experimental approaches to evaluate the effects of doping on performance.
• This work may enable advancements in semiconductor technology, showcasing applications in UV light management.