Abstract Optoelectronic devices often experience performance degradation under extreme conditions, such as elevated dark current and reduced sensitivity. Here we demonstrate that pressure uniquely enhances the optoelectronic performance of boron-rich semiconductor AlCu1-δB25 via an unconventional anti-Wilson effect. Under compression, the photocurrent of AlCu1-δB25 increases by more than twenty-fold, to ∼7.22 μA at 26.5 GPa, while the dark current reduces dramatically by nearly four orders of magnitude (to ∼0.2 nA), yielding an unprecedented improvement in on/off ratio exceeding 105-fold. Simultaneously, pressure significantly accelerates the optoelectronic response, reducing the response time by three orders of magnitude. Optical absorption measurements reveal an anomalous pressure-driven anti-Wilson effect in AlCu1-δB25. First-principles calculations indicate that this anomaly arises from an upward shift of Al-3s states through interactions with B-2s electrons. Our findings underscore the significance of anti-Wilson effect in optimizing optoelectronic properties and establish boron-rich semiconductors as promising candidates for harsh-environment devices.
Huang et al. (Mon,) studied this question.