Effect of sintering temperature on the microstructure, composition, and heat transfer of the GaN/diamond interface

Puntos clave

• The heat transfer at the GaN/diamond interface is directly influenced by the sintering temperature, optimizing thermal performance.
• A sintering temperature increase leads to significant microstructure changes and improved interface composition.
• Assessment using thermal analysis reveals enhanced thermal conductivity at specific temperature thresholds.
• Findings highlight the need for careful temperature regulation to improve the GaN/diamond interface, based on microstructural improvements.