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Revealing deformation mechanisms for O/Si-doped refractory high-entropy alloys at room and elevated temperatures | Synapse
March 3, 2026
Revealing deformation mechanisms for O/Si-doped refractory high-entropy alloys at room and elevated temperatures
CC
Chen Chen
Jiangnan University
YW
Yong Wang
JW
Junbo Wang
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Puntos clave
Deformation mechanisms were characterized, showing distinct responses under different thermal conditions.
Significant findings indicate deformation behaviors at room and elevated temperatures, highlighting changes with O/Si doping.
Analysis conducted on refractory high-entropy alloys, focusing on material strength and stability during deformation processes.
Results suggest implications for high-performance materials, with a need for further exploration into the effects of alloy compositions.
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Chen et al. (Fri,) studied this question.
synapsesocial.com/papers/69a75d72c6e9836116a277da
https://doi.org/https://doi.org/10.1016/j.msea.2026.149866