Ultra-smooth surface of RB-SiC generated by a piezo-Fenton chemical mechanical polishing with high material removal rate

Puntos clave

• An ultra-smooth surface finish was achieved, resulting in significant material removal rates.
• The polishing process utilized a piezo-Fenton method, enhancing efficiency compared to traditional techniques.
• Assessment focused on the surface characteristics of silicon carbide (SiC) produced through the process.
• These findings highlight potential advances in surface treatment technologies for semiconductor materials.