Dual modulation vertical transistor fabricated by CVD grown CsPbBr3 as channel layer and MWCNT as source electrode

Puntos clave

• The vertical transistor architecture enhances performance characteristics effectively, yielding a new approach in device design.
• Key findings suggest that utilizing CVD-grown CsPbBr3 as the channel layer significantly improves electronic properties.
• Assessment involved fabricating the transistor using combined CsPbBr3 and multi-walled carbon nanotubes (MWCNT) in a controlled environment.
• Significance lies in its potential to revolutionize material applications in advanced electronic devices, though scalability remains a consideration.