Stress modulation of 2DEG concentration in thin-barrier AlGaN/GaN HEMT on Si substrate via LPCVD SiN: Experiment and simulation

Puntos clave

• Elevated stress levels significantly reduce the 2DEG concentration.
• A notable decrease of approximately 35% in 2DEG concentration was observed under stress.
• Observation included experimental analysis combined with simulation techniques to assess effects.
• Understanding these modifications may enhance the performance of AlGaN/GaN HEMTs and their applications.