Silicon nitride on-chip C-band spontaneous emission generation based on lanthanide doped microparticles

Puntos clave

• Spontaneous emission generation occurs at C-band wavelengths, indicating successful material integration.
• Key evidence shows enhanced emission efficiency compared to traditional systems, highlighting the role of dopants.
• Assessment using lanthanide doped microparticles within a silicon nitride platform demonstrates effective emission properties.
• Findings suggest practical applications in photonic devices, although scalability remains a crucial factor.